Metal sulfide thin films that are potential optoelectronic device materials are successfully prepared via a thermal decomposition of metal dithiocarbamate complexes under sulfuration agent free conditions. Combination of two dithiocarbamate complexes having different metal centers and of dithiocarbamate complexes with other organometallics can afford binary or more complex sulfide thin films such as copper-indium-sulfide, antimony/bismuth sulfide solid solutions and zinc sulfide. On accordance of the above process, new preparation procedure of contamination free dithiocarbamate complexes consisting of condensation of metal oxide powders with dithiocarbamic acids is proposed.