In this work, the time needed for charge transport (C.T.) through an AlGaAs/GaAs heterostructure is analytically calculated. The system under study can be described by a one-dimensional potential corresponding to the vertical growth between the semiconductor layers. When a bias is applied, resonant tunneling is the dominant mechanism for carrier transport between the emitter and collector layer. The one-dimensional semiclassical path integral method is adopted for the construction of the system’s fixed energy transmission amplitude. The latter reveals the complex spectrum of the structure, providing both the resonance positions and the transport time (T.T.).