Materials based on Ga-Se compounds have gained an considerable interest because of their distinct structural, electronic and optical properties not found in the more traditional group IV, III-V or II-VI based materials. The Ga-Se materials are, however, difficult to work with in bulk form due to their poor mechanical and thermal properties; these problems may be overcome for the use of materials in thin film form. Thin film growth of these materials becomes important particularly by combining with common electronic materials, such as Si, GaAs, etc., through heterointerface technology. Present paper reviews recent progress made in thin film growth of the Ga-Se semiconductors.