This is a review of work on ion beam deposited AIN and AIN:H films. Emphasis will be placed on single beam formation methods and the role of hydrogen in the formation and properties of both stoichiometric AIN and non-stoichiometric AIN:H. The minor components (non-AIN) in the AIN:H films produced on room temperature substrates are shown to be Al-N₂, NH₃ and NH₃⁺. A frequently miss assigned band in the infrared spectrum near 2140 cm^-1 is shown to be due to the N-N stretch in Al-N₂. Results of isotopic substitution studies of AIN:D films will also be presented. The adhesion and atmospheric corrosion resistance of AIN and AIN:H will be contrasted. The use of AIN:H as a synthetic precursor to nano-crystalline and stoichiometric AIN will also be discussed. Infrared UV and visible light spectroscopy, SEM and STM microscopy results, and X-ray diffraction structure studies will be presented. Stoichiometry data obtained by wavelength dispersive X-ray analysis will also be given.