Raman spectroscopy has recently been used to estimate the local residual stress  in Si　devices such as local oxidation of silicon (LOCOS) structures and isolation trenches, and characterize the crystalline quality and crystallite size of new silicon devices such as thin film transistors (TFTs) for active matrix liquid crystal displays and solar panels. We have developed a new near-field optical Raman microscope (SNORM) with a caved and pyramidical probe, using ultra violet (UV) resonant Raman scattering and measured the stress distribution of VLSI (very-large-scale integration) standards. The SNORM we developed has at least the spatial resolution of less than 100nm and is a useful tool to measure image of stresses in Si devices within a short time and with a penetration depth of 5nm. Furthermore, we have measured resonant Raman scattering from nano-polycrystalline silicon (Poly-Si) films with thicknesses of 24nm-381nm at the depth resolution of approximately 5nm and found that Poly-Si films are under compressive stress. We have tried to separate the observed Raman shifts into those caused by the crystallite size effect and those caused by stress in the Poly-Si films, using the UV resonant Raman scattering technique and calculation by the phonon confinement model. It has been found that the crystallite size obtained from Raman measurement roughly agrees with the size obtained from X-ray measurement.